sot23 pnp silicon planar medium power transistor issue 4 ? august 2003 features * 150 volt v ceo * 1 amp continuous current complementary type ? fmmt455 partmarking detail ? 555 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb = 25c p tot 500 mw operating and storage temperature range t j: t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max unit conditions. collector-base breakdown voltage v (br)cbo -160 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -150 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 a collector cut-off current i cbo -0.1 -10 a a v cb =-140v v cb =-140v, t amb =100c emitter cut-off current i ebo -0.1 a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 v i c =-100ma, i b =-10ma* base-emitter saturation voltage v be(sat) -1 v i c =-100ma, i b =-10ma* base-emitter turn-on voltage v be(on) -1 v i c =-100ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 i c =-10ma, v ce =-10v* i c =-300ma, v ce =-10v* transition frequency f t 100 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz * measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device FMMT555 c b e sot23 3 - 131 3 - 132 FMMT555 typical characteristics v ce(sat) vi c i c - collector current (amps) v c e ( s a t ) - ( v o l t s ) i c - collector current (amps) i c - collector current (amps) h fe vi c v be(sat) vi c i c - collector current (amps) v be(on) vi c h f e - n o r m a l i s e d g a i n ( % ) v b e ( s a t ) - ( v o l t s ) v b e - ( v o l t s ) single pulse test at tamb=25c 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) s w i t c h i n g t i m e -0.0001 -0.001 -0.01 -0.1 i c /i b =10 v ce =-10v -0.0001 -0.001 1 -0.01 -0.1 3 2 1 4 5 -0.1 -1 0 i b1 =i b2 =i c /10 -0.01 ztx5 5 4 / 5 5 - 2 ts tf td tr ts s tr ns 300 200 100 400 500 0 tf ns 600 400 200 800 1000 0 td ns 100 50 0 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 0 v ce =-10v i c -collector current (a) 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 s 1ms 1v 0.01 0.001 0.1v 10 1000v
sot23 pnp silicon planar medium power transistor issue 3 ? january 1996 features * 150 volt v ceo * 1 amp continuous current complementary type ? fmmt455 partmarking detail ? 555 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb = 25c p tot 500 mw operating and storage temperature range t j: t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max unit conditions. collector-base breakdown voltage v (br)cbo -160 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -150 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 a collector cut-off current i cbo -0.1 -10 a a v cb =-140v v cb =-140v, t amb =100c emitter cut-off current i ebo -0.1 a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 v i c =-100ma, i b =-10ma* base-emitter saturation voltage v be(sat) -1 v i c =-100ma, i b =-10ma* base-emitter turn-on voltage v be(on) -1 v i c =-100ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 i c =-10ma, v ce =-10v* i c =-300ma, v ce =-10v* transition frequency f t 100 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz * measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device FMMT555 c b e sot23 3 - 131 3 - 132 FMMT555 typical characteristics v ce(sat) vi c i c - collector current (amps) v c e ( s a t ) - ( v o l t s ) i c - collector current (amps) i c - collector current (amps) h fe vi c v be(sat) vi c i c - collector current (amps) v be(on) vi c h f e - n o r m a l i s e d g a i n ( % ) v b e ( s a t ) - ( v o l t s ) v b e - ( v o l t s ) single pulse test at tamb=25c 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) s w i t c h i n g t i m e -0.0001 -0.001 -0.01 -0.1 i c /i b =10 v ce =-10v -0.0001 -0.001 1 -0.01 -0.1 3 2 1 4 5 -0.1 -1 0 i b1 =i b2 =i c /10 -0.01 ztx5 5 4 / 5 5 - 2 ts tf td tr ts s tr ns 300 200 100 400 500 0 tf ns 600 400 200 800 1000 0 td ns 100 50 0 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 0 v ce =-10v i c -collector current (a) 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 s 1ms 1v 0.01 0.001 0.1v 10 1000v
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